
Mitsubishi Electric Corporation has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky Barrier Diode (SBD) embedded Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from June 10, 2024.
Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.
The new modules will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.
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