Navitas Semiconductor, a leader in GaNFast Gallium Nitride (GaN) and GeneSiC Silicon Carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, will exhibit a 250kW SST solution at APEC 2026 in San Antonio Texas that will take place from 22 to 26 March.
The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centres, eliminating bulky low-frequency transformers while improving end-to-end efficiency. EPFL design uses single stage, modularized bridge rectifier SST topology for converting 3.3kV-AC to 800V-DC at 250 kW power and delivers enhanced performance and modularity.
This is built using Navitas GeneSiC Ultra-High Voltage (UHV) 3,300V and High Voltage (HV) 1,200V Silicon Carbide (SiC) Trench-Assisted Planar (TAP) MOSFETs and modules.
